Hsin-wei Tseng

San Francisco Bay Area United States

Research Staff Member at HGST, a Western Digital company

Technology / Software / Internet

Ph.D. in engineering physics in spin-transfer torque (STT) in magnetic tunnel junction (MTJ) and spin Hall effect (SHE). Demonstrated using giant spin Hall in Ta, and W to manipulate the switching for ultrathin magnetic film. Currently, SHE-based MRAM is on the roadmap for next generation MRAM development. Experienced with MRAM device fabrication, magnetic thin film quality control for ultrathin MgO barrier for MRAM application. Characterize the full unique performance of STT-MRAM by establishing Labview instrumentation testing automation and Matlab for data analysis for time-domain high frequency magnetic microwave measurement probing pulsed I-V behavior of STT-MRAM measurement at grad...