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Part – A
Climate Change
Part – B
The Emerging Technology
Wide Band Gap Semiconductors
Gallium Nitride
Silicon Carbide
Diamond
What is Band Gap and Why it Matters?
• Band Gap is the energy required to excite an electron from the
valence band to the conduction band.
• If band gap is large then a higher critical electric field is required
to initiate impact ionization, thus causing avalanche breakdown.
• So the device will have high reverse voltage withstanding
capability.
Breakdown Voltage ˆ= 1/2 * (Drift Width) * (Critical Electric Field)
• For same breakdown voltage, WBG device will be smaller.
• Due to large band energy high temperature is required to cause
ionization, so high temperature operation possible
Why WBG Semiconductor Devices?
• Lower on-resistance
• Faster switching speeds and lower switching losses
• Higher operating temperatures
• Better thermal conductivity
• Smaller size
• Lower cost
• Highly reliable and durable
• High voltage blocking capability
Parameter Comparison
Parameter Units Silicon GaN SiC
Band Gap, Eg eV 1.12 3.39 3.26
Critical Field, ECrit
MV/cm 0.23 3.3 2.2
Electron Mobility, μn cm2/V.s 1400 1500 950
Permittivity, εr _ 11.8 9 9.7
Thermal Conductivity, λ W/cm.K 1.5 1.3 3.8
Aspect of Energy Saving
and Carbon Footprint
1. The impact of Wide Band Gap Semiconductor based power
electronics on energy savings can be simply predicted by the
energy saving record of IGBT Technology in America till date
which is 15 Trillion Dollars which is equivalent to 15 lakh crore
rupees.
2. The cumulative impact of IGBT technology in 20 years has
reduced CO2 emissions by 2 Trillion Pounds which is the total CO2
emission by the world in 2 years.
WBG Inverters convert DC to AC while reducing the losses by 50%
Widee Band Gap Inverters Convert DC to Sc
POWER TRAIN OF TESLA’S ELECTRIC CAR
WBG based LEDs produce
10 times more light and lasts 30 times longer
Expected to save 250 Billion $ by 2030
High Voltage
DC Transmission
References
• Wide Bandgap semiconductors factsheet energy.gov
• The scale-up of wide bandgap power semiconductor
technology and power energy.gov
• Gallium nitride substrates factsheet
• IEEE power electronics magazine vol 2, no. 1 super power
devices
• IEEE power electronics magazine vol 2, no. 2 super power
devices
• Oak Ridge National Laboratory
THANK YOU

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Climate change and emerging technology

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  • 40. Part – B The Emerging Technology
  • 41. Wide Band Gap Semiconductors Gallium Nitride Silicon Carbide Diamond
  • 42. What is Band Gap and Why it Matters? • Band Gap is the energy required to excite an electron from the valence band to the conduction band. • If band gap is large then a higher critical electric field is required to initiate impact ionization, thus causing avalanche breakdown. • So the device will have high reverse voltage withstanding capability. Breakdown Voltage ˆ= 1/2 * (Drift Width) * (Critical Electric Field) • For same breakdown voltage, WBG device will be smaller. • Due to large band energy high temperature is required to cause ionization, so high temperature operation possible
  • 43. Why WBG Semiconductor Devices? • Lower on-resistance • Faster switching speeds and lower switching losses • Higher operating temperatures • Better thermal conductivity • Smaller size • Lower cost • Highly reliable and durable • High voltage blocking capability
  • 44. Parameter Comparison Parameter Units Silicon GaN SiC Band Gap, Eg eV 1.12 3.39 3.26 Critical Field, ECrit MV/cm 0.23 3.3 2.2 Electron Mobility, μn cm2/V.s 1400 1500 950 Permittivity, εr _ 11.8 9 9.7 Thermal Conductivity, λ W/cm.K 1.5 1.3 3.8
  • 45.
  • 46.
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  • 48. Aspect of Energy Saving and Carbon Footprint 1. The impact of Wide Band Gap Semiconductor based power electronics on energy savings can be simply predicted by the energy saving record of IGBT Technology in America till date which is 15 Trillion Dollars which is equivalent to 15 lakh crore rupees. 2. The cumulative impact of IGBT technology in 20 years has reduced CO2 emissions by 2 Trillion Pounds which is the total CO2 emission by the world in 2 years.
  • 49.
  • 50. WBG Inverters convert DC to AC while reducing the losses by 50%
  • 51.
  • 52. Widee Band Gap Inverters Convert DC to Sc POWER TRAIN OF TESLA’S ELECTRIC CAR
  • 53.
  • 54.
  • 55. WBG based LEDs produce 10 times more light and lasts 30 times longer Expected to save 250 Billion $ by 2030
  • 56.
  • 58.
  • 59.
  • 60. References • Wide Bandgap semiconductors factsheet energy.gov • The scale-up of wide bandgap power semiconductor technology and power energy.gov • Gallium nitride substrates factsheet • IEEE power electronics magazine vol 2, no. 1 super power devices • IEEE power electronics magazine vol 2, no. 2 super power devices • Oak Ridge National Laboratory